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2SK3569 TO-220 K3569 TO-220F MOS FET transistor 600V
 
 
 
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 2SK3569 TO-220 K3569 TO-220F TO220 new MOS FET transistor 
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 
• Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) 
• High forward transfer admittance: |Yfs| = 8.5 S (typ.) 
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) 
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 
• Drain-source voltage : Vdss=600V 
 
Добавил:  mehri1982, Чт, 2019-10-31  
 
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| Валюта |  
			 
 - 10 AZN = 5.637 Евро
 - 1 AZN = 59.307 Рубль
 - 1 AZN = 20.493 TL
 - 10 AZN = $5.872
 
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